preliminary this datasheet is possibility of change. because this device is developing now. ISA2166AU1 for general purpose high current drive application silicon pnp epitaxial type isahaya electronics corporation description ISA2166AU1 is a silicon pnp e pitaxial type transistor designed with high collector current, low v ce(sat). feature high collector current i cmax =-500ma low collector to emitter saturation voltage v cesat <-0.4v max (i c =-150ma, i b =-15ma application for switching application, small type motor drive application. maximum ratingsta=25 symbol parameter ratings unit v ceo collector to emit ter voltage -60 v v cbo collector to base voltage -60 v v ebo emitter to base voltage -5 v i c collector current -500 ma p c collector dissipation 150 mw t j junction temperature 150 t stg storage temperature -55150 electrical characteristicsta=25 symbol parameter test condition limits unit min typ max v brceo c to e break down voltage i c =-1ma, i b =0 -60 v v brcbo c to b break down voltage i c =-10ua, i e =0 -60 v v brebo e to b break down voltage i e =-10ua, i c =0 -5 v i cbo collector cut off current v cb =-50v, i e =0 -0.1 ua i ebo emitter cut o ff current v eb =-3v, i c =0 -0.1 ua h fe dc forward current gain i c =-150ma, v ce =-10v 100 300 v cesat c to e saturation voltage i c =-150ma, i b =-15ma -0.4 v v besat b to e saturation voltage i c =-150ma, i b =-15ma -1.3 v f t gain band width product i e =50ma, v ce =-20v,f=100mhz 200 mhz c ob collector output capacitance v cb =-10v, f=1mhz 8 pf outline drawing unitmm terminal connector ?base ?emitter ?collector jeitasc-75a jedec marking ? a w type name 0.12 0 0.1 0.55 0.7 0.32 0.35 0.8 0.35 1.5 0.5 0.5 1.0 1.7 0.22
preliminary this datasheet is possibility of change. because this device is developing now. ISA2166AU1 for general purpose high current drive application silicon pnp epitaxial type isahaya electronics corporation typical characteristics ib=0ua ib=-100ua ib=-200ua ib=-300ua ib=-400ua ib=-500ua -0 -20 -40 -60 -80 -100 -0 -2 -4 -6 -8 -10 collector current ic(ma) collector to emitter voltage vce(v) common emitter output ta=25 10 100 1000 10000 -0.1 -1 -10 -100 -1000 dc forward current gain hfe(-) collector current ic(ma) dc forward current gain vs. collector current 25 85 -40 vce=-10v 0 100 200 300 400 500 1 10 100 1000 gain band width product ft(mhz) emitter current ie(ma) gain band width product vs. emitter current ta=25 vce=-20v -0 -100 -200 -300 -400 -500 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 collector current ic(ma) base to emitter voltage vbe(v) common emitter transfer 25 -40 85 vce=-10v 1 10 100 -0.1 -1 -10 -100 collector output capacitance cob(pf) collector to base voltage vcb(v) collector output capacitance vs. collector to base voltage ta=25 ie=0 f=1mhz 0 50 100 150 200 050100150 collector dissipation pc(mw) ambient temperature ta() collector dissipation vs. ambient temperature
preliminary this datasheet is possibility of change. because this device is developing now. ISA2166AU1 for general purpose high current drive application silicon pnp epitaxial type isahaya electronics corporation -1 -10 -100 -1000 -0.1 -1 -10 -100 -1000 collector to emitter saturation voltage vce(sat)(mv) collector current ic(ma) collector to emitter saturation voltage vs. collector current 25 -40 85 ic/ib=10
6 - 41 tsukuba, isahaya, nagasaki, 854 - 0065 japan keep safety first in your circuit designs! isahaya electronics corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility th at trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropri ate measures such as ( 1) placement of substitutive, auxiliary, ( 2) use of non - farmable material or ( 3) prevention against any malfunct ion or mishap. notes regarding these materials these materials are intended as a reference to our customers in the selection of the isah aya products best suited to the customer?s application; they don't convey any license under any intellectual prop erty rights, or any other rights, belonging isahaya or third party. isahaya electronics corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagram s, charts or circuit application examples contained in these materials . all information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, a nd are subject to change by isahaya electronics corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact isahaya electronics corporation or an authorized isahaya products distr ibutor for the latest product information before purchasing product listed herein. isahaya electronics corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human lif e is potentially at stake. please contact isahaya electronics corporation or an authorized isahaya products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transpor tation, vehicular, medical, aerospace, nuclear, or undersea repeater use. the prior written approval of isahaya electronics corporation is necessary to reprint or reproduce in whole or in part these materials. if these products or technolo gies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to t he export control laws and regulations of japan and/or the country of destination is prohibited. please contact isahaya electronics corporation or authorized isahaya products distributor for further details on these materials or the product s contained therein. apr.2013
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